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Product Description:
Samsung 4TB 990 EVO PLUS M.2 NVMe Gen4/5 PCIe4 Internal SSD: Massive Capacity, Blazing Speed, and Efficiency for Next-Gen Computing
The Samsung 4TB 990 EVO PLUS M.2 NVMe Gen4/5 SSD is a powerful and efficient storage solution engineered to blast through demanding tasks with lightning-quick speeds and offer immense storage capacity.
Featuring the latest Samsung V-NAND TLC technology and a versatile PCIe 4.0 x4 / 5.0 x2 interface, it delivers impressive sequential read speeds of up to 7250 MB/s and write speeds of up to 6300 MB/s. Designed for optimal efficiency, its nickel-coated controller and Intelligent TurboWrite 2.0 ensure sustained performance with reduced power consumption and enhanced thermal control.
Ideal for users seeking cutting-edge performance for massive files, heavy graphics, and instant data transfers, the 990 EVO PLUS also offers advanced data protection and is fully managed by the intuitive Samsung Magician software.
Key Features
- Dual-Interface Versatility (PCIe 4.0/5.0): Supports both PCIe 4.0 x4 and PCIe 5.0 x2 interfaces, offering broad compatibility with current systems and future-proofing for next-generation platforms.
- Massive 4TB Capacity: Provides an enormous 4TB of storage, ideal for vast game libraries, extensive creative projects, and a huge amount of data.
- Blazing-Fast Read/Write Speeds: Achieves sequential read speeds of up to 7250 MB/s and write speeds of up to 6300 MB/s, enabling instant transfers of huge files and rapid application loading.
- High Random Performance: Delivers impressive random 4K read/write speeds of up to 1050K / 1400K IOPS, crucial for responsive multitasking and demanding applications.
- Optimized Power Efficiency: The nickel-coated controller significantly increases MB/s per Watt by 73% compared to the 990 EVO, ensuring high performance with reduced power consumption and effective thermal control.
- Enhanced Intelligent TurboWrite 2.0: Features an enlarged TurboWrite region to process massive data faster and breeze through heavy graphics tasks with sustained peak performance.
- Advanced V-NAND TLC Technology: Built with Samsung`s cutting-edge V-NAND TLC (Triple-Level Cell) storage memory for superior performance, reliability, and endurance.
- Robust Data Protection & Management: Supports AES 256-bit Encryption (Class 0), TCG/Opal, and IEEE1667 (Encrypted drive) for secure data. Also includes TRIM Support, S.M.A.R.T Support, and Auto Garbage Collection Algorithm.
- Samsung Magician Software: Provides a comprehensive suite of optimization tools for the best SSD performance, secure data migration, drive health monitoring, and easy firmware updates.
- Exceptional Endurance: Boasts a formidable Total Bytes Written (TBW) of 2400 TBW and a Mean Time Between Failures (MTBF) of 1.5 Million Hours, ensuring long-term durability and reliability for heavy workloads.
- Compact M.2 2280 Form Factor: Ideal for integration into a wide range of desktop PCs and laptops.
Technical Specifications
Series: Samsung 990 EVO PLUS
- Capacity: 4 TB
- Form Factor: M.2 2280
- Interface: PCIe 4.0 x4 / 5.0 x2 NVMe 2.0
- Controller: Samsung in-house Controller
- Storage Memory: Samsung V-NAND TLC
- Sequential Read: Up to 7250 MB/s
- Sequential Write: Up to 6300 MB/s
- Max Random 4K R/W: 1050K / 1400K IOPS
- Dimensions (WxHxD): Max 80.15 x Max 22.15 x Max 2.38 mm
- Weight: 9g
- Power Consumption (Average): Read 5.5 W / Write 4.8 W
- Power Consumption (Idle): Typical 60 mW
- Device Sleep Mode: Typical 5mW
- Shock Resistance: 1,500 G & 0.5 ms (Half sine)
- Vibration Non-operating: 20~2,000Hz, 20G
- MTBF: 1.5 Million Hours
- Total Bytes Written (TBW): 2400 TBW
| Name | Value |
|---|---|
| Manufacturer Part Number | MZ-V9S4T0BW |
| Manufacturer | Samsung |
| Product Type | Internal SSD |
| Capacity | 4TB |
| Form Factor | M2 |
| Interface | PCIe 4.0 |
| Product Barcode | 8806095575667 |
| Product Line | Samsung 990 EVO PLUS |
| Write Speed | Up to 6300 MB/s |
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